橢偏儀在位表征電化學沉積的係統搭建（二十九）- 能級壽命和電導率

正文

橢偏儀(yi) 在位表征電化學沉積的係統搭建（二十九）- 能級壽命和電導率

能級壽命和電阻率及電導率有如下關(guan) 係式，Γ=ħγ，能級壽命=1/γ，電阻率ρ=γ/而電導率=1/ρ，通過求得的電阻率就可得到電導率。前麵擬合已經得到的Drude中的等離子體(ti) 頻率(w_p)、阻尼頻率(Γ)及Lorentz Oscillator參數：振幅(A)、中心能量(E)、展寬能量(Γ)和光學常數：n，k，，，如表4-2所示。把相應的參數帶入上述公式計算得到CU₂O沉積薄膜的能級壽命和電導率如圖4-15和圖4-16所示。

圖4-15是不同沉積時間下對應的CU₂O沉積薄膜的能級壽命，可以看到能級壽命在10^-16-10^-14s數量級之間。對於(yu) Drude能級壽命在所有沉積時間下都在10^-15s數量級，且有隨著時間的增加而減小的趨勢。Drude模型描述的是金屬的特性，所以這裏反映的是Au襯底的信息，而隨著沉積時間的增加沉積薄膜變厚Au襯底的信息將變小，Drude能級壽命減小趨勢可由此而來。振子1的能級壽命對應於(yu) E_OA、E_OB、E_OC和E_OD躍遷激子，其值大都在10^-16s數量級，隨時間的變化規律不明顯。振子2的能級壽命對應於(yu) E_OAE_OBE_OCE_ODE_1A躍遷激子，360s和720s的在10^-15s數量級，其餘(yu) 在10^-16s數量級，隨著時間的增加有減小的趨勢。振子3的能級壽命對應於(yu) E_OC、E_OD和E_1A躍遷激子，其變化比較大，360s和720s在10^-14s數量級，而180s、540s、900s在10^-16s數量級，1080s在10^-15s數量級。振子4的能級對應於(yu) E_1A、E_1B躍遷激子，在10^-16s數量級及10^-15s數量級且隨時間的增加先減小後增大。

圖4-15 CU₂O隨沉積時間變化的能級壽命

通過中心能量和能級壽命分析歸納出擬合得到的中心能量對應的躍遷和能級壽命如表4-3所示。可以看到發生zui多的躍遷是E_OC和E_OD躍遷，發生zui少的躍遷是E_1B的躍遷。

圖4-16是通過Drude模型中的參數計算得到的電導率，可以看到180s和540s的電導率為(wei) 10³S/m數量級，它接近金屬的導電特性。對於(yu) 180s由前麵的擬合厚度知此時沉積的CU₂O薄膜厚度為(wei) 48nm，結合橢偏儀(yi) 的測試穿透深度知其可同時探測到Au基底的信息，故而這裏的電導率較大。對於(yu) 540s的電導率可能是由於(yu) 薄膜沉積不均勻，使得測試的點在該沉積時間下厚度並沒有達到層狀模型擬合出來的163nm，可能測試的剛好是島狀生長模型假設下島與(yu) 島之間的區域，和180s的一樣反映的更多是Au基底的信息，故而其值較大。360s、720s、900s和1080s的電導率在10⁴S/m數量級，反映的是半導體(ti) 電導率特性，這與(yu) X-ray測試結果相吻合，即沉積的薄膜是CU₂O。

圖4-16 Drude 模型中CU₂O電導率隨沉積時間的變化

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